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Dr Rajan Kumar Pandey

vidwan id: 190744
Male

Associate Professor, School of Electronics Engineering
Vellore Institute of Technology, Vellore

Expertise

  • Nanoscience and Nanotechnology

Publications

Total Articles 60
Books 0
Proceedings 0

Publications

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Scopus

Citations 672
h-index 11

CrossRef

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Citations 421
h-index 9
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Professional Recognition

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Community & Membership

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Bio

Electronic structure theory, ab-initio materials modeling, materials physics of electronic devices, semiconductor device physics, physics of nanostructures, nanoelectronics.

Personal Details

  • Male
  • Associate Professor , Vellore Institute of Technology, Vellore
  • Vellore Institute of Technology
PhD
Other Institute 2006
Associate Professor Jul 2019 – Present
Vellore Institute of Technology, Vellore | School of Electronics Engineering

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Co-Authors (15)

Abhisek

Prof Abhisek Dixit

Indian Institute of Technology Delhi

Anil

Dr Anil Kottantharayil

Indian Institute of Technology Bombay

Chandan

Dr Chandan Upadhyay

Indian Institute of Technology (BHU), Varanasi

Kedar

Dr Kedar Singh

Jawaharlal Nehru University

Kaushik

Dr Kaushik Nayak

Indian Institute of Technology Hyderabad

Raman

Dr Raman Karthik V

Tata Institute of Fundamental Research Hyderabad

Mayank

Dr Mayank Shrivastava

Indian Institute of Science Bangalore

Manoj K

Prof Manoj K Harbola

Indian Institute of Technology Kanpur

Nilesh

Dr Nilesh Goel

Birla Institute of Technology and Science

V. Ramgopal

Prof V. Ramgopal Rao

Birla Institute of Technology and Science

Sajal

Dr Sajal Dhara

Indian Institute of Technology Kharagpur

Swaroop

Dr Swaroop Ganguly

Indian Institute of Technology Bombay

Shobhana

Prof Shobhana Narasimhan

Jawaharlal Nehru Centre for Advanced Scientific Research, Banaglore

Souvik

Dr Souvik Mahapatra

Indian Institute of Technology Bombay

Mohit

Dr Mohit Bajaj

Graphic Era University, Dehradun

Scholarly Work

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Scholarly Publications

A tunnel FET for VDD scaling below 0.6 v with a CMOS-comparable performance

Open Access
Article
Authors: Asra R.;Shrivastava M.;Murali K.V.R.M.;Pandey R.K.;Gossner H.;Rao V.R.

Gate tunneling in nanoscale transistors

Open Access
conference-paper
Authors:

Crystallographic-Orientation-Dependent Gate-Induced Drain Leakage in Nanoscale MOSFETs

Open Access
journal-article

A Method to Optimize Gate Induced Drain Leakage Currents in Low Power Devices

Open Access
disclosure
Authors:

A Modified Local Density Approximation based Channel Quantization Model for Nanoscale MOSFETs

Open Access
conference-paper
Authors:

A Physical Model of Orientation Dependent Gate Induced Drain Leakage in Si based Devices

Open Access
conference-paper
Authors:

Simulation of X-ray Absorption Near Edge Spectra of Organometallic Compounds in the Ground and Optically Excited States

Open Access
journal-article

Simulation of x-ray absorption near-edge spectra and x-ray fluorescence spectra of optically excited molecules

Open Access
journal-article