Ministry of Education
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Dr Nikhil K. S.

vidwan id: 176808
Male

Assistant Professor, Electronics and Communication Engineering
National Institute of Technology Karnataka

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Expertise

  • Telecommunications

Publications

Total Articles 13
Books 0
Proceedings 0

Publications

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Scopus

Citations 36
h-index 3

CrossRef

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Citations 32
h-index 3
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Bio

Semiconductor Device Modeling; Compact modeling of devices; TCAD simulation and design of microelectronics devices; ESD and device reliability; Neuromorphic device design

Personal Details

  • Male
  • Assistant Professor , National Institute of Technology Karnataka
  • P. O. Srinivasnagar, Mangalore
Ph.D
Indian Institute of Technology Madras 2018
Assistant Professor Sep 2019 – Present
National Institute of Technology Karnataka | Electronics and Communication Engineering

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Co-Authors (4)

Amitava Das

Amitava Das Gupta

Indian Institute of Technology Madras

Anjan

Prof Anjan Chakravorty

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Rathnamala

Dr Rathnamala Rao

National Institute of Technology Karnataka

Nandita

Nandita DasGupta

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Scholarly Work

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Scholarly Publications

A 0.5–5 Gb/s Wide Range, 160 fJ/Pulse Fully Integrated 13th-Order CMOS IR-UWB Transmitter for Wireless Capsule Endoscopy Systems

Open Access
Article
INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS. Year: 2025.
Authors: Akuri N.;Kumar K.;Kumar S.;Nikhil K.S.;Song H.
DOI 10.1002/cta.4379

Temperature dependence of linearity parameters of GaN-based junctionless drain extended FinFET

Open Access
Article
Microelectronics Journal. Year: 2025. Volume: 165 .
Authors: Ashwini N.;Nikhil K.S.
DOI 10.1016/j.mejo.2025.106813

Modeling of β-Ga2O3 based double gate drain extended junction less FET and its parameter extraction methodology

Open Access
Article
Modelling and Simulation in Materials Science and Engineering. Year: 2025. Volume: 33 , Issue: 2 .
Authors: Manukrishna V.R.;Nikhil K.N.S.
DOI 10.1088/1361-651X/ada819

Analysis of the non-monotonic dependence of FOM of β-Ga2O3based Junctionless Field Effect Transistor on doping profile linearity in the drift region

Open Access
Conference Paper
Year: 2024. Pages: 282-286 .
Authors: Manukrishna V.R.;Nikhil K.S.
DOI 10.1109/ICDCS59278.2024.10560488

Impact of Gate Oxide Thickness Variation on the On-state Safe Operating Area and FoM of SOI-Junctionless FinFET considering the Self-heating Effects

Open Access
Conference Paper
Year: 2024. Issue: 2024 .
Authors: Vinaya S.J.;Nikhil K.S.
DOI 10.1109/ICACC63692.2024.10845422

Improvement in Breakdown Voltage of Junctionless Power Transistor with Ga2O3 RESURF region

Open Access
Conference Paper
Year: 2023.
Authors: Manukrishna V.R.;Nikhil K.S.
DOI 10.1109/ICITIIT57246.2023.10068623

Effect of Charge Partitioning on IM3 Prediction in SOI-LDMOS Transistors

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2020. Volume: 67 , Issue: 2 , Pages: 606-613 .
Authors: Gupta S.;Nikhil K.S.;Dasgupta N.;Dasgupta A.;Chakravorty A.
DOI 10.1109/TED.2019.2958822
1 1

Simulation and Modelling of screen oxide thickness dependent implantation peak position in Silicon

Open Access
Conference Paper
Year: 2020.
Authors: Hegde G.R.;Nikhil K.S.;Rao R.
DOI 10.1109/CONECCT50063.2020.9198502