Ministry of Education
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Dr Anirvan Dasgupta

vidwan id: 16673
Male

Professor, Department of Mechanical Engineering
Indian Institute of Technology Kharagpur

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Expertise

  • Mechanical Engineering

Publications

Total Articles 14
Books 0
Proceedings 0

Publications

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Scopus

Citations 15
h-index 2

CrossRef

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Citations 4
h-index 1
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Bio

Mechanics of membranes, Vibration induced particle transport, Wave propagation, Dynamics of discrete and continuous systems

Personal Details

  • Male
  • Professor , Indian Institute of Technology Kharagpur
  • Indian Institute of Technology Kharagpur
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Professor Jun 1999 – Present
Indian Institute of Technology Kharagpur | Department of Mechanical Engineering

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Co-Authors (6)

Amitava Das

Amitava Das Gupta

Indian Institute of Technology Madras

Anjan

Prof Anjan Chakravorty

Indian Institute of Technology Madras

Dhiman

Prof Dhiman Chatterjee

Indian Institute of Technology Madras

Nandita

Nandita DasGupta

Indian Institute of Technology Madras

Nihar Ranjan

Dr Nihar Ranjan Mohapatra

Indian Institute of Technology Gandhinagar

O

Prof O Uma Maheswari

Anna University

Scholarly Work

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Scholarly Publications

Extraction and Optimization of Compact Drain Current Model Parameters for GaN High-Electron-Mobility Transistors

Open Access
Article
Year: 2023. Volume: 220 , Issue: 16 .
Authors: Ganguly P.;Chakravorty A.;DasGupta N.;DasGupta A.
DOI 10.1002/pssa.202200495

Suppression of Impact Ionization by Carbon Doping in the GaN Buffer Layer in InAlN/GaN-Based High Electron Mobility Transistors

Open Access
Article
Year: 2023. Volume: 220 , Issue: 16 .
Authors: Sarkar S.;Khade R.P.;DasGupta N.;DasGupta A.
DOI 10.1002/pssa.202200490
1

An accurate method to extract thermal resistance of GaN-on-Si HEMTs

Open Access
Article
Applied Physics Letters. Year: 2023. Volume: 122 , Issue: 21 .
Authors: Shanbhag A.;Khade R.P.;Sarkar S.;Sruthi M.P.;Nair D.;Chakravorty A.;DasGupta N.;DasGupta A.
DOI 10.1063/5.0141198
1

Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2023. Volume: 70 , Issue: 3 , Pages: 979-985 .
Authors: Sruthi M.P.;Shanbhag A.;Nair D.R.;Chakravorty A.;Alam M.A.;Dasgupta N.;Dasgupta A.
DOI 10.1109/TED.2023.3240018
1 2

Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified

Open Access
Conference Paper
Year: 2023. Volume: 2023-March .
Authors: Sruthi M.P.;Zaman Mamun M.A.;Nair D.R.;Chakravorty A.;Dasgupta N.;Dasgupta A.;Alam M.A.
DOI 10.1109/IRPS48203.2023.10118187
1

Substrate Bias Stress Induced Kink Effect in GaN-on-Silicon High-Electron-Mobility Transistor

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2023. Volume: 11 , Pages: 294-302 .
Authors: Khade R.P.;Sarkar S.;Shanbhag A.;Dasgupta A.;Dasgupta N.
DOI 10.1109/JEDS.2023.3275277
1

Suppression of Kink in the Output Characteristics of AlInN/GaN High Electron Mobility Transistors by Post-Gate Metallization Annealing

Open Access
Article
IEEE Journal of the Electron Devices Society. Year: 2023. Volume: 11 , Pages: 78-83 .
Authors: Sarkar S.;Khade R.P.;Shanbhag A.;Dasgupta N.;Dasgupta A.
DOI 10.1109/JEDS.2022.3224500

RF MEMS capacitive shunt switch for low loss applications

Open Access
Article
Journal of Micromechanics and Microengineering. Year: 2023. Volume: 33 , Issue: 3 .
Authors: Joy K.;Swarnkar A.;Giridhar M.S.;DasGupta A.;Nair D.R.
DOI 10.1088/1361-6439/acb58c
1 3