Ministry of Education
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Dr Gourab Dutta

vidwan id: 158184
Male

Assistant Professor (Grade-I),
Indian Institute of Technology Kharagpur

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 34
Books 0
Proceedings 0

Publications

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Scopus

Citations 372
h-index 9

CrossRef

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Citations 0
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Professional Recognition

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Community & Membership

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IEEE

2023
Senior Member

IEEE

2018
Member

IEEE

2013
Student Member

Bio

Microelectronics and Semiconductor Devices ,Emerging Electronics ,Compound semiconductor devices: Gallium Nitride (GaN) and Gallium Oxide (Ga2O3),2D Electronics

Personal Details

  • Male
  • Assistant Professor (Grade-I) , Indian Institute of Technology Kharagpur
  • Department of Electronics and Electrical Communication Engg., IIT Kharagpur
Ph.D
Other Institute 2017
Assistant Professor (Grade-I) Jul 2020 – Present
Indian Institute of Technology Kharagpur
Assistant Professor (Grade-II) Jan 2018 – Jun 2020
Indian Institute of Technology Kharagpur | Department of Electronics and Electrical Communication Engineering

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Co-Authors (9)

Amitava Das

Amitava Das Gupta

Indian Institute of Technology Madras

Aniket

Dr Aniket Singha

Indian Institute of Technology Kharagpur

Dhrubes

Prof Dhrubes Biswas

Indian Institute of Technology Kharagpur

M S Ramachandra

Prof M S Ramachandra Rao

Indian Institute of Technology Madras

Nandita

Nandita DasGupta

Indian Institute of Technology Madras

Mannam

Dr Mannam Ramanjaneyulu

Vignan's Foundation of Science, Technology & Research, Guntur

Subhojyoti

Dr Subhojyoti Sinha

S R M Institute of Science & Technology, Chennai

Sukla

Prof Sukla Basu

Kalyani Government Engineering College

Tarun Kanti

Dr Tarun Kanti Bhattacharya

Indian Institute of Technology Kharagpur

Scholarly Work

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Scholarly Publications

Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2017. Volume: 64 , Issue: 9 , Pages: 3609-3615 .
Authors: Dutta G.;Dasgupta N.;Dasgupta A.
DOI 10.1109/TED.2017.2723932
58

Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2016. Volume: 63 , Issue: 4 , Pages: 1450-1458 .
Authors: Dutta G.;DasGupta N.;DasGupta A.
DOI 10.1109/TED.2016.2529428
43

Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2016. Volume: 63 , Issue: 12 , Pages: 4693-4701 .
Authors: Dutta G.;Dasgupta N.;Dasgupta A.
DOI 10.1109/TED.2016.2618421
28

A Compact Model of Drain Current for GaN HEMTs Based on 2-DEG Charge Linearization

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2016. Volume: 63 , Issue: 11 , Pages: 4226-4232 .
Authors: Karumuri N.;Dutta G.;Dasgupta N.;Dasgupta A.
DOI 10.1109/TED.2016.2605130
34

Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC

Open Access
Article
Thin Solid Films. Year: 2016. Volume: 607 , Pages: 1-6 .
Authors: Shukla M.;Dutta G.;Mannam R.;DasGupta N.
DOI 10.1016/j.tsf.2016.03.060
14

Positive shift in threshold voltage for reactive-ion- sputtered Al2O3/AlInN/GaN MIS-HEMT

Open Access
Article
IEEE Electron Device Letters. Year: 2014. Volume: 35 , Issue: 11 , Pages: 1085-1087 .
Authors: Dutta G.;Turuvekere S.;Karumuri N.;Dasgupta N.;Dasgupta A.
DOI 10.1109/LED.2014.2357837
55

Characteristics of GaN MOSFET with stacked gate dielectric of MgO and TiO2

Open Access
Conference Paper
Year: 2012. Pages: 211-214 .
Authors: Dutta G.
DOI 10.1109/ASDAM.2012.6418530
1

Analysis of the electrical characteristics of GaInP/GaAs HBTs including the recombination effect

Open Access
Article
Journal of Semiconductors. Year: 2012. Volume: 33 , Issue: 5 .
Authors: Dutta G.;Basu S.
DOI 10.1088/1674-4926/33/5/054002
7