Ministry of Education
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Dr ARNAB DATTA

vidwan id: 155279
Male

Assistant Professor, Electronics and Communication Engineering
Indian Institute of Technology Roorkee

Orchid Icon 0000-0002-2931-1991 Google Scholar Icon 27067587200

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 44
Books 0
Proceedings 0

Publications

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Scopus

Citations 240
h-index 8

CrossRef

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Citations 135
h-index 6
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Professional Recognition

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Community & Membership

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Bio

Micro (Nano) Electronic Devices: Electrical Characterization and Modeling of Semiconductor Devices, Non-Volatile Memories, Advanced MOSFET Reliability, MOS Device Fabrication, MEMS: Electro-mechanical Switches, Device Failure Mechanism, Photonics: Semiconductor Photonic Devices, Novel Photonic Devices

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Roorkee
  • Department of Elctronics and Communication Engineering
Ph.D
Indian Institute of Technology Bombay 2010
Assistant Professor Dec 2012 – Present
Indian Institute of Technology Roorkee | Electronics and Communication Engineering

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Co-Authors (12)

Anand

Dr Anand Bulusu

Indian Institute of Technology Roorkee

Arvind K

Dr Arvind K Sharma

Birla Institute of Technology and Science

Subho

Dr Subho Dasgupta

Indian Institute of Science Bangalore

Mandeep

Dr Mandeep Singh

National Institute of Technology Karnataka

Monojit

Prof Monojit Bag

Indian Institute of Technology Roorkee

Navjeet

Dr Navjeet Bagga

Indian Institute of Technology Bhubaneswar

Pragati

Prof Pragati Kumar

Delhi Technological University

Sachin Kumar

Dr Sachin Kumar Srivastava

Indian Institute of Technology Roorkee

Sanjeev

Dr Sanjeev Manhas

Indian Institute of Technology Roorkee

Sooraj

Dr Sooraj Ravindran

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Souvik

Dr Souvik Mahapatra

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Sudeb

Prof Sudeb Dasgupta

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Scholarly Work

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Scholarly Publications

Impact of Bias Temperature Stress on IGZO/Ni/IGZO Steep Subthreshold Vertical Current Driver Fabricated at Room Temperature

Open Access
Article
IEEE Transactions on Device and Materials Reliability. Year: 2021. Volume: 21 , Issue: 2 , Pages: 273-278 .
Authors: Kishore R.;Vishwakarma K.;Datta A.
DOI 10.1109/TDMR.2021.3081023

Sub-pico-second hole generation lifetime in thin film IGZO sputtered and annealed on P-silicon substrate

Open Access
Article
IEEE Transactions on Nanotechnology. Year: 2021. Volume: 20 , Pages: 392-399 .
Authors: Kishore R.;Vishwakarma K.;Datta A.
DOI 10.1109/TNANO.2021.3077538
3

Eight-Level/Cell Storage by Tuning the Spatial Distribution of Dielectrics in a Tri-Layer ReRAM Cell: Electrical Characteristics and Reliability

Open Access
Article
IEEE Transactions on Device and Materials Reliability. Year: 2021. Volume: 21 , Issue: 4 , Pages: 587-593 .
Authors: Vishwakarma K.;Kishore R.;Datta A.
DOI 10.1109/TDMR.2021.3120966
1

Impact of Nonuniform Ozone Anneal Treatment on the Resistance Levels in an IGZO-ReRAM Fabricated on ITO-Coated Glass Substrate

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2021. Volume: 68 , Issue: 12 , Pages: 6087-6093 .
Authors: Kishore R.;Vishwakarma K.;Datta A.
DOI 10.1109/TED.2021.3121231
4

A Thermal Circuit Representing Frequency Dependent Dynamic Heating between Electron and Lattice in SOI-FinFET

Open Access
Article
IEEE Transactions on Device and Materials Reliability. Year: 2021. Volume: 21 , Issue: 4 , Pages: 579-586 .
Authors: Kumar V.;Dasgupta S.;Datta A.
DOI 10.1109/TDMR.2021.3120947
4

Symmetric linear rise and fall of conductance in a trilayer stack engineered RERAM-based synapse

Open Access
Article
ACS Applied Electronic Materials. Year: 2020. Volume: 2 , Issue: 10 , Pages: 3263-3269 .
Authors: Vishwakarma K.;Datta A.;Kishore R.
DOI 10.1021/acsaelm.0c00585
5

Oxide edge trap density extraction in silicon nanowire MOSFET from tunnel current noise measurement in gated diode like arrangement

Open Access
Article
IEEE Transactions on Device and Materials Reliability. Year: 2020. Volume: 20 , Issue: 3 , Pages: 512-516 .
Authors: Kumar Sharma D.;Datta A.
DOI 10.1109/TDMR.2020.3000356
1

LSPR Excitation on Au Nanorings From Integrated Hybrid Plasmonic Aperture Waveguide and Its Application in Methanol Detection in the IR-Band

Open Access
Article
IEEE Sensors Journal. Year: 2019. Volume: 19 , Issue: 15 , Pages: 6119-6125 .
Authors: Singh M.;Datta A.
DOI 10.1109/JSEN.2019.2909002
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