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Dr Bhaswar Chakrabarti

vidwan id: 150451
Male

Assistant Professor, Department of Electrical Engineering
Indian Institute of Technology Madras

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 45
Books 0
Proceedings 0

Publications

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Scopus

Citations 1153
h-index 14

CrossRef

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Citations 893
h-index 12
Google Scholar

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Professional Recognition

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Community & Membership

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Bio

Micro/Nano-Electronics, Neuromorphic computation, Non-volatile memory

Personal Details

  • Male
  • Assistant Professor , Indian Institute of Technology Madras
  • Indian Institute Of Technology, Chennai, Tamil Nadu, India
Ph.D.
Other Institute 2013
Assistant Professor Mar 2019 – Present
Indian Institute of Technology Madras | Department of Electrical Engineering

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Co-Authors (5)

Abhishek

Dr Abhishek Misra

Indian Institute of Technology Madras

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Prof Anjan Chakravorty

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Scholarly Work

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Resistive switching memory device

Argonne National Lab
- Patent No. : 10,483,464 Filed : 17-11-2019
Published : 19-11-2019 Published

Scholarly Publications

Memristive Dendritic Device with a Chemical Vapor-Deposited Monolayer MoS2 Film

Open Access
Article
Authors: Thool A.S.;Roy S.;Mukherjee U.;Barman P.K.;Poudyal S.;Misra A.;Chakrabarti B.

Demonstration of a PECVD SiOx-Based RRAM Dendritic Device

Open Access
Article

28 nm high-k-metal gate ferroelectric field effect transistors based synapses — A comprehensive overview

Open Access
Review
Authors: Raffel Y.;Müller F.;Thunder S.;Sk M.R.;Lederer M.;Pirro L.;Beyer S.;Seidel K.;Chakrabarti B.;Kämpfe T.;De S.

A physics-based compact model of thermal resistance in RRAMs

Open Access
Article
Authors: Pande S.;Balanethiram S.;Chakrabarti B.;Chakravorty A.

Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiOx/Au Resistive Memory Devices

Open Access
Article

Compute in-Memory with Non-Volatile Elements for Neural Networks: A Review from a Co-Design Perspective

Open Access
Review
Authors: Haensch W.;Raghunathan A.;Roy K.;Chakrabarti B.;Phatak C.M.;Wang C.;Guha S.

Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital Set and Analog Reset Switching

Open Access
Article
Authors: Basnet P.;Anderson E.C.;Athena F.F.;Chakrabarti B.;West M.P.;Vogel E.M.

Insulator-to-metal phase transition in a few-layered MoSe2 field effect transistor

Open Access
Article
Authors: Pradhan N.R.;Garcia C.;Chakrabarti B.;Rosenmann D.;Divan R.;Sumant A.V.;Miller S.;Hilton D.;Karaiskaj D.;McGill S.A.