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Prof Sheikh Aamir Ahsan

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Male

Assistant Professor, Department of Electronics and Communication Engineering
National Institute of Technology Srinagar

Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 35
Books 0
Proceedings 0

Publications

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Scopus

Citations 668
h-index 14

CrossRef

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Citations 503
h-index 12
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Professional Recognition

2019

Early Career Research Award

Science and Engineering Research Board

Community & Membership

2017

IEEE Electron Devices Society

Member
2024

IEEE EDS Technical Committee on Compact Modeling

Member
2025

IEEE EDS Meetings & Conferences Committee

Member
2025

IEEE EDS Conference Engagement Ad Hoc Committee

Member

IEEE

2024
Senior Member

Bio

GaN Technology Development, Power Electronics, RF, Characterization, SPICE Models

Personal Details

  • Male
  • Assistant Professor , National Institute of Technology Srinagar
  • National Institute of Technology Srinagar
Ph.D
Indian Institute of Technology Kanpur 2017
Assistant Professor Oct 2018 – Present
National Institute of Technology Srinagar | Department of Electronics and Communication Engineering

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Co-Authors (4)

Avinash

Dr Avinash Lahgere

Indian Institute of Technology Kanpur

Chandan

Dr Chandan Yadav

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Yogesh Singh

Dr Yogesh Singh Chauhan

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Pragya

Dr Pragya Kushwaha

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Scholarly Work

Development and Augmentation of the Industry Standard ASM-GaN-HEMT Model for State-of-the-art Integrated Circuit Design

Funding Agency: SERB

Principal Investigator

3,000,000

2019 - 2021

Completed
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Scholarly Publications

A SPICE Compact Model for Ambipolar 2-D-Material FETs Aiming at Circuit Design

Open Access
Article
Authors: Ahsan S.A.;Singh S.K.;Mir M.A.;Perucchini M.;Polyushkin D.K.;Mueller T.;Fiori G.;Marin E.G.

Modeling of Bias-Dependent Effective Velocity and Its Impact on Saturation Transconductance in AlGaN/GaN HEMTs

Open Access
Article
Authors: Pampori A.U.H.;Ahsan S.A.;Dangi R.;Goyal U.;Tomar S.K.;Mishra M.;Chauhan Y.S.

A Comprehensive Physics-Based Current-Voltage SPICE Compact Model for 2-D-Material-Based Top-Contact Bottom-Gated Schottky-Barrier FETs

Open Access
Article

Impact of Via-Inductance on Stability Behavior of Large Gate-Periphery Multi-finger RF Transistors

Open Access
Conference Paper
Authors: Ahsan S.A.;Pampori A.;Ghosh S.;Khandelwal S.;Chauhan Y.S.

ASM GaN: Industry Standard Model for GaN RF and Power Devices - Part 1: DC, CV, and RF Model

Open Access
Article
Authors: Khandelwal S.;Chauhan Y.S.;Fjeldly T.A.;Ghosh S.;Pampori A.;Mahajan D.;Dangi R.;Ahsan S.A.

ASM-HEMT: Industry standard GaN HEMT model for power and RF applications (invited paper)

Open Access
Conference Paper
Authors: Ghosh S.;Ahsan S.A.;Khandelwal S.;Pampori A.;Dangi R.;Chauhan Y.S.

Physics-based Compact Modeling of MSM-2DEG GaN-based Varactors for THz Applications

Open Access
Conference Paper
Authors: Ul Haq Pampori A.;Ahsan S.A.;Ghosh S.;Khandelwal S.;Chauhan Y.S.

Analysis and modeling of cross-coupling and substrate capacitances in GaN HEMTs for power-electronic applications

Open Access
Article