Ministry of Education
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Dr P Premchander

vidwan id: 137277
Male

Assistant Professor - Senior Scale, Department of Applied Science and Technology
Anna University

Orchid Icon 0000-0002-3724-2009 Google Scholar Icon 6506333647 Researcher Icon A-4635-2009 Google Scholar Icon premchanderp@gmail.com

Expertise

  • Materials Science Characterization, Testing

Publications

Total Articles 16
Books 0
Proceedings 0

Publications

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Scopus

Citations 100
h-index 6

CrossRef

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Citations 85
h-index 5
Google Scholar

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Professional Recognition

2001

Junior Scientist

TUDelft-The Netherlands
2004

Brain Korea-21 Fellow

Gwangju Institute of Science and Technology-Republic of Korea
2007

Docencia-Juan de la Ceirva (JdC) Fellow

University of Barcelona-Spain

Community & Membership

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Bio

Semiconductors

Personal Details

  • Male
  • Assistant Professor - Senior Scale , Anna University
  • DOTE campus
Ph.D.,
Other Institute 2004
Assistant Professor - Senior Scale Feb 2011 – Present
Anna University | Department of Applied Science and Technology

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Co-Authors (6)

Balakrishnan

Dr Balakrishnan L

Government College of Technology Coimbatore

Sivaji

Dr Sivaji Krishnan

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Prof Manoravi Periasamy

S R M Institute of Science & Technology, Chennai

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Prof N Gopalakrishnan

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Prof Ramasamy Jayavel

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Scholarly Work

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Scholarly Publications

Production of vacancy defects in high-energy Sn-ion irradiated GaN - Positron beam Doppler broadening study

Open Access
Conference Paper
Year: 2006. Volume: 376-377 , Issue: 1 , Pages: 507-511 .
Authors: Premchander P.;Abhaya S.;Sivaji K.;Amarendra G.;Baskar K.;Lee Y.
DOI 10.1016/j.physb.2005.12.129
5 5

Investigations of the characteristics of strain-free oxidation on InAlAs epilayer lattice matched to indium phosphide

Open Access
Article
Applied Physics Letters. Year: 2006. Volume: 88 , Issue: 20 .
Authors: Perumal P.;Kim J.M.;Lee Y.T.;Kim S.S.
DOI 10.1063/1.2204654
2 3

Optical study of GaN epilayer grown by metalorganic chemical vapor deposition and pulsed laser deposition

Open Access
Article
Journal of Crystal Growth. Year: 2005. Volume: 273 , Issue: 3-4 , Pages: 363-367 .
Authors: Premchander P.;Manoravi P.;Joseph M.;Baskar K.
DOI 10.1016/j.jcrysgro.2004.09.046
5 6

Adhesive wafer bonding of GaN, InP and Si with passivated GaAs substrates by selective SeS2 treatment and its dielectric properties

Open Access
Conference Paper
Year: 2005. Pages: 103-106 .
Authors: Premchander P.;Lee Y.

Effect of SeS2 treatment on the surface modification of GaAs and adhesive wafer bonding of GaAs with Silicon

Open Access
Article
Journal of Crystal Growth. Year: 2004. Volume: 263 , Issue: 1-4 , Pages: 454-458 .
Authors: Premchander P.;Jayavel R.;Arivuoli D.;Baskar K.
DOI 10.1016/j.jcrysgro.2003.12.015
3 4

Growth and characterization of selenium sulfide (SeS) and selenium tin sulfide (SeSnS2) microcrystals

Open Access
Article
Journal of Crystal Growth. Year: 2004. Volume: 263 , Issue: 1-4 , Pages: 498-503 .
Authors: Premchander P.;Baskar K.;Jayavel R.;Arivuoli D.;Palanichamy M.
DOI 10.1016/j.jcrysgro.2003.11.110
6 7

Optical properties of high energy tin (Sn5+) ion irradiated metal-organic chemical vapor deposition grown GaN on sapphire

Open Access
Article
Year: 2004. Volume: 43 , Issue: 7 A , Pages: 4150-4152 .
Authors: Perumal P.;Ganaprakasam S.;Krishnan B.
DOI 10.1143/JJAP.43.4150
5 6

Investigations of structural and optical analysis of SeS and SeSnS 2 microcrystals

Open Access
Article
Journal of Crystal Growth. Year: 2004. Volume: 267 , Issue: 1-2 , Pages: 166-172 .
Authors: Premchander P.;Arivuoli D.;Baskar K.
DOI 10.1016/j.jcrysgro.2004.03.050
3 4