Ministry of Education
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Dr Subir Kumar Maity

vidwan id: 118437
Male

Assistant Professor, School of Electronics Engineering
Kalinga Institute of Industrial Technology, Bhubaneswar

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Expertise

  • Electrical and Electronic Engineering

Publications

Total Articles 43
Books 0
Proceedings 0

Publications

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Scopus

Citations 174
h-index 8

CrossRef

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Citations 76
h-index 5
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Professional Recognition

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Bio

Vlsi Design and Microelectronics, Nano Scale Mosfet

Personal Details

  • Male
  • Assistant Professor , Kalinga Institute of Industrial Technology, Bhubaneswar
  • Kalinga Institute of Industrial Technology (KIIT)
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Assistant Professor Jun 2012 – Present
Kalinga Institute of Industrial Technology, Bhubaneswar | School of Electronics Engineering

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Co-Authors (15)

Arindam

Dr Arindam Basak

Kalinga Institute of Industrial Technology, Bhubaneswar

Amlan

Prof Amlan Datta

Kalinga Institute of Industrial Technology, Bhubaneswar

Anindita

Dr Anindita Chatterjee

Koneru Lakshmaiah Education Foundation, Guntur

Bishnu Prasad

Dr Bishnu Prasad De

Kalinga Institute of Industrial Technology, Bhubaneswar

Dibyendu

Dr Dibyendu Chowdhury

Haldia Institute of Technology 103

Durbadal

Dr Durbadal Mandal

National Institute of Technology Durgapur

Durbadal

Dr Durbadal Mandal

National Institute of Technology Durgapur

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Dr Gourisankar Roymahapatra

Haldia Institute of Technology 103

Himadri Sekhar

Dr Himadri Sekhar Das

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Pradipta

Dr Pradipta Dutta

Kalinga Institute of Industrial Technology, Bhubaneswar

Rajesh

Prof Rajesh Das

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Rajib

Dr Rajib Kar

National Institute of Technology Durgapur

Rajendra

Dr Rajendra Prasad

Kalinga Institute of Industrial Technology, Bhubaneswar

Rudra Sankar

Dr Rudra Sankar Dhar

National Institute of Technology Mizoram

Udai P

Prof Udai P Singh

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Scholarly Work

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Scholarly Publications

A SPICE compatible physics-based intrinsic charge and capacitance model of InAs-OI-Si MOS transistor

Open Access
Article
Superlattices and Microstructures. Year: 2021. Volume: 156 .
Authors: Maity S.K.;Pandit S.
DOI 10.1016/j.spmi.2021.106975
2 2

Physics based compact modeling of symmetric double gate MOS transistors with high mobility III-V channel material

Open Access
Article
Superlattices and Microstructures. Year: 2021. Volume: 155 .
Authors: Toan H.L.M.;Maity S.K.
DOI 10.1016/j.spmi.2021.106925
6 7

Analysis of scaling of thickness of the buffer layer on analog/RF and circuit performance of InAs-OI-Si MOSFET using NQS model

Open Access
Article
Year: 2020. Volume: 33 , Issue: 1 .
Authors: Maity S.K.;Pandit S.
DOI 10.1002/jnm.2664
4 4

Charge-Based Compact Drain Current Modeling of InAs-OI-Si MOSFET including Subband Energies and Band Nonparabolicity

Open Access
Article
IEEE Transactions on Electron Devices. Year: 2020. Volume: 67 , Issue: 6 , Pages: 2282-2289 .
Authors: Maity S.K.;Haque A.;Pandit S.
DOI 10.1109/TED.2020.2984578
5 6

Sub-Threshold Performance Assessment of Ultra-Thin Body InGaAs-on Insulator Negative Capacitance MOS Transistor

Open Access
Article
Year: 2020. Volume: 12 , Issue: 11 , Pages: 2681-2688 .
Authors: Maity S.K.
DOI 10.1007/s12633-019-00364-6
1 1

UTB III-V-OI-Si MOS transistor: The future transistor for VLSI design

Open Access
Book Chapter
Year: 2019. Pages: 27-45 .
Authors: Maity S.K.;Pandit S.
DOI 10.1049/PBCS073G_ch2

Performance Assessment of UTB-SOI MOS Transistor with Negative Capacitance Gate-stack

Open Access
Conference Paper
Year: 2018.
Authors: Priyadarshini E.;Maity S.K.
DOI 10.1109/AESPC44649.2018.9033231

Compact drain current modeling of InAs-OI-Si MOS transistor including quantum confinement

Open Access
Conference Paper
Year: 2018. Pages: 1-5 .
Authors: Maity S.;Pandit S.
DOI 10.1109/ISDCS.2018.8379654
1 4